Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control
نویسندگان
چکیده
منابع مشابه
Threshold Voltage Control for Deep Sub-micrometer Fully Depleted SOI MOSFET
In this paper, the threshold voltage of fully depleted silicon on insulator device with geometry scale down below 100nm is investigated deeply. All the device simulations are performed using SILVACO Atlas device simulator. Several ways to control the threshold voltage are proposed and simulated. Threshold voltage changing with the silicon film thickness, channel doping concentration, gate oxide...
متن کامل2-D modeling of potential distribution and threshold voltage of short channel fully depleted dual material gate SOI MESFET
A two-dimensional analytical model for the potential distribution along the bottom channel of the fully depleted region of dual material gate (DMG) SOI MESFET is presented. The potential distribution is modeled by solving the Poisson equation with proper boundary conditions. The model for the potential distribution is extended to derive an analytical expression for the threshold voltage. The ac...
متن کاملAnalytical Modeling and Simulation of Short-channel Effects in a Fully Depleted Dual-material Gate (dmg) Soi Mosfet
Silicon-on-insulator (SOI) has been the forerunner of the CMOS technology in the last decade offering superior CMOS devices with higher speed, higher density, excellent radiation hardness and reduced second order effects for submicron VLSI applications. Recent experimental studies have invigorated interest in fully depleted (FD) SOI devices because of their potentially superior scalability rela...
متن کاملAnalysis and Design of Sub-Threshold R-MOSFET Tunable Resistor
The sub-threshold R-MOSFET resistor structure which enables tuning range extension below the threshold voltage in the MOSFET with moderate to weak inversion operation is analyzed in detail. The principal operation of the sub-threshold resistor is briefly described. The analysis of its characteristic based on approximations of a general MOS equation valid for all regions is given along with disc...
متن کاملEffect of Channel Doping Concentration on the Impact ionization of n- Channel Fully Depleted SOI MOSFET
Impact ionization in fully depleted (FD) Silicon On Insulator (SOI) n-Channel MOSFET is investigated as a function of the doping concentration. We have found that impact ionization increases with the decrease in the doping concentration and vice versa. Simulation results obtained from Sentaurus TCAD with the higher doping concentration can control the threshold voltage (Vth). Furthermore we hav...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: SAMRIDDHI : A Journal of Physical Sciences, Engineering and Technology
سال: 2017
ISSN: 2454-5767,2229-7111
DOI: 10.18090/samriddhi.v9i01.8340